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The Molecular Beam Epitaxy (MBE) facility within the Department of Electronic Engineering is the only III-V (Gallium Arsenide related) MBE compound semiconductor growth system in an Australian University. It therefore not only performs its own research but also collaborates closely with all other Australian Universities with interests in this class of advanced semiconductor materials, as well as several internationally. In house techniques which are also a part of the facility include high resolution x-ray diffraction, photoluminescence, Raman spectroscopy, Hall effect, Scanning Electron Microscopy with energy and wavelength dispersive spectroscopies and Transmission Electron Microscopy.